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September 2010
DB3-DB3TG
150mW Bi-directional Trigger Diodes
Features
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V BO : 32V Version
Low break-over current
DO-35 package (JEDEC)
Hermetically sealed glass
Compression bonded construction
All external surfaces are corrosion resistant and
terminals are readily solderable
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RoHS compliant
High reliability glass passivation insuring parameter stability and
protection against junction contamination.
Terminal: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed : 260 ° C/10 seconds
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings and Electrical Characteristics
Symbol
Parameter
DB3
Value
DB3TG
Units
V BO
±V BO
I BO
Δ V
Break-over Voltage
Break-over Voltage Symmetry
Break-over Current
Dynamic Break-over Voltage
@ C=22nF Min.
Typ.
Max.
@ C=22nF Max.
@ C=22nF Max.
@ I BO to I F =10mA Min.
28
32
36
±3
100
5
30
32
34
±2
15
9
V
V
V
V
μ A
V
I B
V O
Leakage Current
Output Voltage
@ V B =0.5V BO (Max.) Max.
*see diagram 1 Min.
10
5
μ A
V
P D
I FRM
R θ ja
T J, T STG
Power Dissipation
Repetitive Peak Forward Current, Pulse Width=20 μ sec
Typical Thermal Resistance, Junction to Ambient (Note1)
Junction and Storage Temperature Range
150
2
400
-40 to +125
mW
A
° C/W
° C
* Rating at 25°C ambient temperature unless otherwise specified.
* Notes: 1. Valid provided that electrodes are kept at ambient temperature
? 2010 Fairchild Semiconductor Corporation
DB3-DB3TG Rev. A1
1
www.fairchildsemi.com
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